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| SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 3 IGBT Modules SKM 200GB173D SKM 200GB173D1 SKM 200GAL173D SKM 200GAR173D Freewheeling Diode Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 15-09-2006 RAA (c) by SEMIKRON SKM 200GB173D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 3 IGBT Modules SKM 200GB173D SKM 200GB173D1 SKM 200GAL173D SKM 200GAR173D Module FWD Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB GAL GAR 2 15-09-2006 RAA (c) by SEMIKRON SKM 200GB173D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 3 Zth(j-c)D IGBT Modules SKM 200GB173D SKM 200GB173D1 SKM 200GAL173D SKM 200GAR173D Features Typical Applications GB GAL GAR 3 15-09-2006 RAA (c) by SEMIKRON SKM 200GB173D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 15-09-2006 RAA (c) by SEMIKRON SKM 200GB173D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ CAl diode recovered charge 5 15-09-2006 RAA (c) by SEMIKRON SKM 200GB173D 6 15-09-2006 RAA (c) by SEMIKRON |
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